Method of manufacturing a semiconductor device

ABSTRACT

An apparatus is provided. The apparatus includes a spinner configured to hold a wafer, a nozzle configured to supply a liquid chemical onto an upper surface of the wafer, and a laser module configured to heat the wafer by radiating a laser beam to a lower surface of the wafer while the nozzle supplies the liquid chemical onto the upper surface of the wafer.

This application is a Continuation Application of U.S. PatentApplication No. 16/683,753, filed on Nov. 14, 2019, which claimspriority under 35 U.S.C. §119 to Korean Patent Application No.10-2019-0013644, filed on Feb. 1, 2019, in the Korean IntellectualProperty Office, the disclosure of each of which is incorporated hereinin its entirety by reference.

BACKGROUND 1. Field

The present disclosure relates to a semiconductor device manufacturingapparatus, e.g., a wafer cleaning device or a wafer etching device, anda method of manufacturing semiconductor devices using the apparatus.

2. Description of the Related Art

A wet cleaning process used in a semiconductor manufacturing process isa process of etching, e.g., using a hard mask on a wafer and using ahigh-temperature liquid chemical. This wet cleaning process is performedby batch-type equipment in a conventional method. The batch-typeequipment refers to equipment that wet-cleans one set of wafers, not onewafer, by simultaneously immersing the set of wafers in a liquidchemical.

The batch-type equipment may cause problems in wafers, such as flowdefects, poor dry and bad dispersion uniformity. To address theseproblems, it has been considered/urged to switch to single-typeequipment. The single-type equipment refers to equipment that applies awet cleaning process to wafers one by one.

However, even in the single-type equipment, the dispersion of etch ratesmay not be uniform enough depending on the position of one wafer.Therefore, there is a need for a development of a wafer cleaning/etchingdevice that may achieve a uniform dispersion of etch rates according tothe position of a wafer.

SUMMARY

Aspects of the present disclosure provide a wafer etching/cleaningdevice capable of achieving a uniform dispersion of etch rates.

Aspects of the present disclosure also provide a wafer etching/cleaningmethod employed to achieve a uniform dispersion of etch rates.

However, the invention is not restricted to the embodiments set forthherein. The above and other aspects of the present disclosure willbecome more apparent to one of ordinary skill in the art to which thepresent disclosure pertains by referencing the detailed description ofthe present disclosure given below.

According to an exemplary embodiment of the present inventive concept,there is provided an apparatus. The apparatus includes a spinnerconfigured to hold a wafer, a nozzle configured to supply a liquidchemical onto an upper surface of the wafer, and a laser moduleconfigured to heat the wafer by radiating a laser beam to a lowersurface of the wafer.

According to an exemplary embodiment of the present inventive concept,there is provided an apparatus. The apparatus includes a spinnerconfigured to hold sides of a wafer the spinner configured to rotatetogether with the wafer, a nozzle configured to supply a liquid chemicalonto an upper surface of the wafer, a housing spaced apart from thespinner, a hollow formed in the housing, a laser module disposed at abottom of the hollow, the laser module configured to radiate a laserbeam that passes through the hollow, a blocking film formed at a bottomof the hollow, the blocking film configured to block a laser beam, and atransparent window disposed at a top of the hollow, the transparentwindow configured to transmit the laser beam.

According to an exemplary embodiment of the present inventive concept,there is provided an apparatus. The apparatus includes a hollow formedin a housing, a laser module configured to radiate a laser beam, a gripconfigured to hold a wafer, and a transparent window disposed at a topof the hollow to seal the hollow, the transparent window positioned totransmit the laser beam, wherein the transparent window is positionedadjacent to a lower surface of the wafer, and wherein the laser moduleis configured to heat the wafer by irradiating the entire lower surfaceof the wafer to the laser beam.

According to an exemplary embodiment of the present inventive concept,there is provided a method of manufacturing a semiconductor device. Themethod includes placing a wafer above a housing by holding the waferwith a spinner on sides of the wafer, supplying a liquid chemical ontothe wafer, rotating the wafer using the spinner to evenly spread theliquid chemical on an upper surface of the wafer, and heating the waferwith a first laser beam radiated from a laser module disposed in thehousing.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other aspects will become apparent and more readilyappreciated from the following description of the embodiments, taken inconjunction with the accompanying drawings in which:

FIG. 1 is a cross-sectional view of a wafer cleaning/etching deviceaccording to some embodiments;

FIG. 2 is a detailed plan view of the wafer cleaning/etching device ofFIG. 1 ;

FIG. 3 is a conceptual diagram illustrating an operation of anaspherical lens of FIG. 1 ;

FIG. 4 is a conceptual diagram illustrating the operation of anaspherical lens of a wafer cleaning/etching device according to someembodiments;

FIG. 5 is a graph illustrating a laser type of a laser module of FIG. 1;

FIG. 6 is a graph illustrating a laser type of a laser module of a wafercleaning/etching device according to some embodiments;

FIG. 7 is a cross-sectional view of a wafer cleaning/etching deviceaccording to some embodiments;

FIG. 8 is a cross-sectional view of a wafer cleaning/etching deviceaccording to some embodiments;

FIG. 9 is a cross-sectional view of a wafer cleaning/etching deviceaccording to some embodiments;

FIG. 10 is a conceptual diagram illustrating and operation of first andsecond rotors of FIG. 9 ;

FIG. 11 is a block diagram of a wafer cleaning/etching device accordingto some embodiments and a cooling module;

FIG. 12 is a flowchart illustrating a wafer cleaning/etching methodaccording to some embodiments;

FIG. 13 is a detailed flowchart illustrating a heating operation of thewafer cleaning/etching method according to the embodiments; and

FIG. 14 is a detailed flowchart illustrating a heating operation of awafer cleaning/etching method according to some embodiments.

DETAILED DESCRIPTION

A wafer cleaning device according to embodiments will now be describedwith reference to FIGS. 1 through 6 . Wafer cleaning devices describedin the present disclosure may be wafer etching devices. For example, thewafer cleaning devices may perform etching processes forming patterns onwafers by using etchant chemical liquids. The wafer cleaning devices mayalso perform cleaning processes which maintain patterns formed on thewafers. The wafer cleaning process may use water and/or cleaningchemical liquid to perform the cleaning processes.

FIG. 1 is a cross-sectional view of a first wafer cleaning device 10according to some embodiments. FIG. 2 is a detailed plan view of thefirst wafer cleaning device 10 of FIG. 1 .

Referring to FIGS. 1 and 2 , the first wafer cleaning device 10according to the embodiments may include a housing 100, a first spinner160, a nozzle 170, a bowl 180, a laser module 110, a hollow region 140,a reflective plate 130, and a transparent window 150. The hollow region140 described herein may be a hollow formed by a space enclosed by awall made of a solid structure.

A first direction X may be any one direction among horizontaldirections. A second direction Y may be any one direction amonghorizontal directions different from the first direction X. The seconddirection Y may intersect the first direction X. For example, the seconddirection Y may be a direction perpendicular to the first direction X. Athird direction Z may be a direction intersecting the first direction Xand the second direction Y. For example, the third direction Z may be adirection perpendicular to both the first direction X and the seconddirection Y. The third direction Z may be, for example, a verticaldirection. Accordingly, the first direction X, the second direction Y,and the third direction Z may be orthogonal to each other.

The housing 100 may be located under a wafer W. For example, the housing100 and the wafer W may be arranged spaced apart in the third directionZ. The housing 100 may warm and/or heat the wafer, e.g., a lower surfaceof the wafer W. An upper surface of the housing 100 may be adjacent tothe lower surface of the wafer W. However, the housing 100 and the waferW may not contact each other. The wafer W described herein may be asemiconductor wafer, e.g., a silicon wafer or a germanium wafer, or maybe a substrate other than a semiconductor wafer.

It will be understood that when an element is referred to as being“connected” or “coupled” to or “on” another element, it can be directlyconnected or coupled to or on the other element or intervening elementsmay be present. In contrast, when an element is referred to as being“directly connected” or “directly coupled” to another element, or as“contacting” or “in contact with” another element, there are nointervening elements present.

The laser module 110, the hollow region 140, the reflective plate 130and the transparent window 150 may be included in the housing 100. Forexample, the laser module 110, the hollow region 140, the reflectiveplate 130 and the transparent window 150 may be disposed inside thehousing 100. The housing 100 may serve to fix and support the positionsof the laser module 110, the hollow region 140, the reflective plate 130and the transparent window 150.

The housing 100 may be fixed in a position under the wafer W. Therefore,even if the wafer W rotates in a first rotation direction a 1 or asecond rotation direction a 2, the housing 100 may not rotate. However,the current embodiments are not limited to this case. In a wafercleaning device according to certain embodiments, the housing 100 mayalso rotate together with the wafer W or may rotate separately.

The first spinner 160 may contact sides of the wafer W. The firstspinner 160 may rotate the wafer W while holding the wafer W on thesides of the wafer W. As the first spinner 160 rotates in the firstrotation direction a 1 or the second rotation direction a 2, the wafer Wmay also rotate in the same direction.

When the wafer W rotates along with the first spinner 160, a liquidchemical 171 supplied onto an upper surface of the wafer W may be evenlyspread on the upper surface of the wafer W. The rotation of the wafer Walong with the first spinner 160 may help the upper surface of the waferW have a uniform etch rate.

The first spinner 160 may include a grip portion 161 and a supportportion 162. The grip portion 161 may be a portion that contacts/touchesthe sides of the wafer W. The grip portion 161 may hold the wafer W bydirectly hold (e.g., contacting) the sides of the wafer W. Accordingly,the grip portion 161 may rotate in the first rotation direction a 1 orthe second rotation direction a 2 together with the wafer W. The gripportion 161 described herein may be a grip or a holder designed to holdor grip the wafer W. The support portion 162 described herein may be asupport designed to support the grip or the holder, e.g., from under thegrip or the holder. For example, the support may be combined with thegrip or the holder. In certain embodiments, the grip portion 161 and thesupport portion 162 of the first spinner 160 may be formed integrally.

The grip portion 161 may include a heat insulating material. When thewafer W is warmed and/or heated by various elements (e.g., the lasermodule 110) in the housing 100, the grip portion 161 may block transferof heat, thereby preventing thermal damage to other parts of the firstwafer cleaning device 10.

The support portion 162 may be connected to the grip portion 161. Thesupport portion 162 may extend downward from the grip portion 161. Thesupport portion 162 may support the grip portion 161. The supportportion 162 may cover an outer surface of the housing 100.

The support portion 162 may rotate in the first rotation direction a 1or the second rotation direction a 2 together with the grip portion 161.Here, the whole of the support portion 162 may rotate, or only a part ofthe support portion 162 may rotate. When only a part of the supportportion 162 rotates, the rotating part may be a part of the supportportion 162 which is connected to the grip portion 161. Therefore, thewafer W may rotate in the first rotation direction a 1 or the secondrotation direction a 2, e.g., together with the grip portion 161 and thepart of the support portion 162 which is connected to the grip portion161.

The first spinner 160 may rotate the wafer W in the first rotationdirection a 1 or the second rotation direction a 2 at an appropriatespeed. This is because when the rotation speed of the first spinner 160is too high, an edge portion of the wafer W is relatively cooled,leading to a non-uniform distribution of temperature. In this case, theetch rate may also be different in a central portion from the edgeportion of the wafer W.

Therefore, the rotation speed of the first spinner 160 may be limited to100 to 300 rpm. However, the invention is not limited to this case.

The nozzle 170 may be located above the wafer W and the first spinner160. The nozzle 170 may supply the liquid chemical 171 to the uppersurface of the wafer W. The nozzle 170 may drop the liquid chemical 171onto the central portion of the wafer W, e.g., at the center of theupper surface of the wafer W. As the wafer W rotates, the dropped liquidchemical 171 may be spread over the entire upper surface of the wafer W.The first wafer cleaning device 10 may apply a flow F in a downwarddirection in order to fix/stabilize the wafer W in position anduniformly spread the liquid chemical 171. Therefore, the liquid chemical171 may move from the center of the upper surface of the wafer W to theperiphery. For example, the flow F may be a gas flow. For example, theflow F may include N₂ gas.

The nozzle 170 sprays the liquid chemical 171 in the downward directionfrom above the upper surface of the wafer W in FIG. 1 . However, thepresent disclosure is not limited to this case. In some embodiments, thenozzle 170 may be disposed on a side of the wafer W at a position higherthan the upper surface of the wafer W. In certain embodiments, thenozzle 170 may supply the liquid chemical 171 to the upper surface ofthe wafer W by ejecting the liquid chemical 171 in a lateral direction,e.g., by applying a high pressure to the liquid chemical 171 to ejectthe liquid chemical 171 from the nozzle 170. For example, the liquidchemical 171 may be sprayed to the upper surface or the wafer W by thehigh pressure applied to the liquid chemical 171.

The liquid chemical 171 may be a solution for etching the upper surfaceof the wafer W, e.g., to form a pattern on the wafer W. For example, SiNor polysilicon contained in the wafer W may be a material to be etched.

The liquid chemical 171 may vary according to a material to be etched.The liquid chemical 171 may include at least one of, but not limited to,phosphoric acid, ammonia water, and tetramethylammonium hydroxide.

The liquid chemical 171 is supplied by the nozzle 170. The nozzle 170may eject the liquid chemical 171 onto the upper surface of the wafer Wat an appropriate amount and rate. This is because if the liquidchemical 171 is provided too much or too fast, the temperature rise ofthe wafer W may be slowed down too much. Therefore, the nozzle 170 mayprovide the liquid chemical 171 onto the wafer W at a rate of, but notlimited to, 0.1 L/min to 1 L/min.

The upper surface of the wafer W fixed/anchored by the first spinner 160may be located at a position higher than a lower surface of the firstwafer cleaning device 10 by a first height H1.

The bowl 180 may be located outside the wafer W, the first spinner 160and the housing 100. The bowl 180 may extend in the third direction Z toa position higher than the upper surface of the wafer W. The bowl 180may block the outflow of the liquid chemical 171 and fumes produced bythe vaporization of the liquid chemical 171. The bowl 180 mayprevent/protect other parts of the first wafer cleaning device 10 frombeing damaged by the liquid chemical 171 and the fumes.

The elements in the housing 100 will now be described in detail.

The laser module 110 may be disposed inside the housing 100. The lasermodule 110 may radiate a laser beam from under the wafer W to the lowersurface of the wafer W. The laser module 110 may be located under thehollow region 140. For example, the laser module 110 may be disposed atthe bottom of the hollow region 140. A first laser beam L1 radiated bythe laser module 110 may pass through the hollow region 140 and thetransparent window 150 to reach the lower surface of the wafer W.

The laser module 110 may include an optical fiber 111 and an asphericallens 120. A laser beam of the laser module 110 may be supplied throughthe optical fiber 111. The optical fiber 111 may be connected to theoutside so as to form a path through which a laser beam is supplied.

The first wafer cleaning device 10 may have sizes in a unit of cm. Forexample, first width d 1 of the first spinner 160 in the first directionX may be, but is not limited to, 35 to 40 cm. For example, the firstwidth d 1 of the first spinner 160 may correspond to the diameter of thefirst spinner 160. The first height H1 may be, but is not limited to, 50to 70 cm. A second height H2 from the upper surface of the wafer Wand/or from a top surface of the first spinner 160 to a top of the firstwafer cleaning device 10 may be, but is not limited to, 30 cm. Forexample, the top surface of the first spinner 160 and the top surface ofthe wafer W may be coplanar.

The laser module 110 should not be too large because it supplies a laserbeam into the first wafer cleaning device 10. Therefore, it may bebeneficial to supply a laser beam through the optical fiber 111 insteadof a module for supplying a laser beam using a mirror that may use arelatively long reflection distance. However, the invention is notlimited to this case.

The laser module 110 may include additional lenses e.g., in addition tothe aspherical lens 120 described above. For example, the additionallenses may include aspherical lenses and/or spherical lenses. Theaspherical lens 120 may process/change the profile of a laser beamsupplied by the optical fiber 111 e.g., in combination with theadditional lenses. This will be described in more detail later.

The hollow region 140 may be located inside the housing 100. The hollowregion 140 may be an empty space inside the housing 100. The hollowregion 140 may be a region where the first laser beam L1 radiated by thelaser module 110 travels to the lower surface of the wafer W.

An upper portion of the hollow region 140 may be covered by thetransparent window 150. Accordingly, the hollow region 140 may becompletely isolated from the outside by the housing 100 and thetransparent window 150. This may be intended to prevent the laser module110 and the hollow region 140 from being contaminated by the liquidchemical 171 and the fumes generated by the liquid chemical 171.

The inside of the hollow region 140 may be a vacuum. For example, thehollow 140 may be maintained to be a vacuum state while an etchingprocess is performed by the cleaning/etching device 10. Therefore, thefirst laser beam L1 may easily travel in the hollow region 140. However,the invention is not limited to this case, and the inside of the hollowregion 140 may be filled with a gas medium that does not hinder thetravel of the first laser beam L1.

The hollow region 140 may be hemispherical. For example, the hollowregion 140 may be surrounded by the reflective plate 130 at a sideportion and a bottom portion, and by the transparent window 150 at anupper portion of the hollow region 140. For example, the hollow region140 may be formed in a hemispherical shape so that a second laser beamL2 generated by the reflection of the first laser beam L1 by the lowersurface of the wafer W may be reflected by the reflective plate 130,e.g., toward the wafer W. Therefore, a third laser beam L3 generated bythe reflection of the second laser beam L2 by the reflective plate 130may efficiently reach the lower surface of the wafer W.

The reflective plate 130 may be disposed at and/or surround a bottomportion of the hollow region 140. The reflective plate 130 may reflectthe second laser beam L2 generated by the reflection of the first laserbeam L1 radiated from the laser module 110 by the lower surface of thewafer W. Accordingly, the third laser beam L3 generated by thereflection of the second laser beam L2 by the reflective plate 130 mayreach the lower surface of the wafer W.

The second laser beam L2 generated by the reflection of the first laserbeam L1 may damage the first wafer cleaning device 10 when reachingother parts of the first wafer cleaning device 10. Therefore, thereflective plate 130 may serve to prevent the second laser beam L2 fromreaching other parts of the first wafer cleaning device 10. At the sametime, the reflective plate 130 may make the third laser beam L3 reachthe lower surface of the wafer W by reflecting the second laser beam L2,thereby improving the warming efficiency of the wafer W.

The transparent window 150 may be located in the upper surface/portionof the housing 100. For example, the transparent window 150 may seal theupper portion of the housing 100. The transparent window 150 may coverthe top of the hollow region 140. The transparent window 150 may be madeof a transparent material through which the first laser beam L1, thesecond laser beam L2, and the third laser beam L3 may pass through thetransparent window 150. For example, the transparent window 150 may bemade of a quartz material.

The transparent window 150 may be adjacent to the wafer W. A gap betweenthe transparent window 150 and the wafer W may be a third width d 3. Thethird width d 3 may be relatively small as compared with the first widthd 1, a second width d 2, the first height H1 and the second height H2.Therefore, the first laser beam L1, the second laser beam L2 and thethird laser beam L3 may not leak to other places than the lower surfaceof the wafer W.

However, the transparent window 150 and the wafer W may not contact eachother. This is because the wafer W needs to be rotated by the firstspinner 160, whereas the housing 100 equipped with the transparentwindow 150 may not rotate.

Since it is beneficial that the entire lower surface of the wafer W isuniformly warmed or heated, the lower surface of the wafer W and aninterface of the transparent window 150 may correspond to each other.For example, the edge portion of the wafer W may also be exposed to thefirst laser beam L1 and the third laser beam L3 through the transparentwindow 150. For example, the edge of the wafer W may overlap the edge ofthe transparent window 150 in a plan view.

FIG. 3 is a conceptual diagram illustrating the operation of theaspherical lens 120 of FIG. 1 .

Referring to FIGS. 1 through 3 , the aspherical lens 120 may process alaser beam. For example, the first laser beam L1 supplied by the opticalfiber 111 may have a Gaussian profile Lg. For example, the first laserbeam L1 may have a Gaussian energy profile E with respect to distance d,e.g., when the first laser beam L1 emits from the optical fiber 111.

The Gaussian profile Lg of the first laser beam L1 may be converted intoa first output profile Lo 1 as the first laser beam L1 passes throughthe aspherical lens 120. Referring to the first output profile Lo 1, auniform energy E may be supplied to the entire lower surface of thewafer W, which corresponds to the second width d 2, regardless of thedistance d.

Therefore, the first wafer cleaning device 10 may make the temperatureof the wafer W uniform, thereby obtaining a uniform etch rate throughoutthe wafer W.

The first output profile Lo 1 may be the profile of the first laser beamL1. In certain embodiments, the first output profile Lo 1 may be the sumof the profile of the first laser beam L1 and the profile of the thirdlaser beam L3. For example, when the third laser beam L3 is notsubstantial, the profile of the first laser beam L1 and the sum of theprofile of the first laser beam L1 and the profile of the third laserbeam L3 may be substantially the same. Since the sum of the profiles ofthe first laser beam L1 and the third laser beam L3 is a laser beamactually applied to the lower surface of the wafer W, the first wafercleaning device 10 may perform an etching process uniformly by usingthis laser beam.

When the first output profile Lo 1 is the sum of the profiles of thefirst laser beam L1 and the third laser beam L3, the shape of the hollowregion 140 as well as the design of the aspherical lens 120 may beparameters for the first output profile Lo 1. For example, the firstwafer cleaning device 10 may adjust the first output profile Lo 1uniformly through the curvature of a hemispherical surface of the hollowregion 140 and the design of the aspherical lens 120. For example, thecurvature of the hemispherical surface and the aspherical lens 120 maybe designed for the cleaning device 10 to output a uniform profile likethe first output profile Lo 1. For example, the aspherical lens 120 maybe designed in consideration of the curvature of the hemisphericalsurface, and vice versa.

FIG. 4 is a conceptual diagram illustrating an operation of anaspherical lens 120 of a first wafer cleaning device 10 according tosome embodiments.

Referring to FIG. 4 , the first wafer cleaning device 10 according tothe embodiments may convert the Gaussian profile Lg of the first laserbeam L1 into a second output profile Lo 2 through the aspherical lens120. The second output profile Lo 2 may be the profile of the firstlaser beam L1, or may be the sum of the profile of the first laser beamL1 and the profile of the third laser beam L3.

The second output profile Lo 2 may be a profile obtained by increasingthe energy E reaching the edge portion of the wafer W. The second outputprofile Lo 2 may increase the temperature of the edge portion of thewafer W. The first wafer cleaning device 10 may have the downward flow Fon the upper surface of the wafer W. Since the flow F moves to outsidethe wafer W through the edge of the wafer W, the edge portion of thewafer W may be cooled unintentionally.

To offset this, the first wafer cleaning device 10 may adjust the sum ofthe profiles of the first laser beam L1 and the third laser beam L3 tothe second output profile Lo 2 by adjusting, e.g., the curvatures of theaspherical lens 120 and/or the reflective plate 130.

FIG. 5 is a graph illustrating a laser type of the laser module 110 ofFIG. 1 .

Referring to FIGS. 1 and 5 , the first laser beam L1 of the laser module110 may be of a continuous wave type. The continuous wave type is theopposite of a pulse type and refers to a laser beam radiatedcontinuously without being turned on and off. Here, the frequency orwavelength component of the laser beam itself also exists in thecontinuous wave type.

The first laser beam L1 of the laser module 110 may be radiatedcontinuously with a magnitude of a first energy E1. The first laser beamL1 may be radiated constantly with the first energy E1 without varyingin magnitude of energy over time.

The laser module 110 of the first wafer cleaning device 10 according tothe embodiments may increase the efficiency of temperature rise by usinga laser beam of the continuous wave type. Therefore, the etch rate ofthe first wafer cleaning device 10 may also be increased.

FIG. 6 is a graph illustrating a laser type of a laser module 110 of afirst wafer cleaning device 10 according to some embodiments.

Referring to FIG. 6 , the first laser beam L1 of the laser module 110 ofthe first wafer cleaning device 10 according to the embodiments may beof a pulse type. The pulse type is the opposite of the continuous wavetype and refers to a laser beam radiated discontinuously by beingperiodically turned on and off. Apart from the on/off frequency, thefrequency or wavelength component of the laser beam itself also existsin the pulse type when the laser beam is turned on.

The first laser beam L1 of the laser module 110 may be periodicallyradiated in the form of pulses with a magnitude of a third energy E3. Anaverage energy of the first laser beam L1 may be a second energy E2. Aninterval between the pulses of the first laser beam L1 may be a firstinterval T1.

The first interval T1 may be in a unit of several nanoseconds or severalpicoseconds. For example, the frequency of the first laser beam L1 ofthe pulse type may be 10 to 1000 MHz. A too low frequency may not besuitable because the wafer W may be physically perforated instead ofbeing warmed, e.g., when the third energy E3 is too high.

In the case of the first laser beam L1 of the pulse type, the intensityof warming may be adjusted by adjusting/changing the frequency, e.g.,pulse frequency, of the first laser beam L1 of the pulse type withoutadjusting/changing the energy of the first laser beam L1.

The laser module 110 of the first wafer cleaning device 10 according tothe embodiments may easily perform temperature control through frequencyadjustment using a laser beam of the pulse type. Therefore, the firstwafer cleaning device 10 may perform a precise etching process.

A second wafer cleaning device 11 according to some embodiments will nowbe described with reference to FIG. 7 . Descriptions of elements andfeatures identical to those of the above-described embodiments will begiven briefly or omitted.

FIG. 7 is a cross-sectional view of a second wafer cleaning device 11according to some embodiments.

Referring to FIG. 7 , the second wafer cleaning device 11 according tothe embodiments may include a first light-absorbing plate 131.

The first light-absorbing plate 131 may be formed at a bottom and a sideof a hollow region 140. The first light-absorbing plate 131 may absorb asecond laser beam L2 generated by the reflection of a first laser beamL1 by a lower surface of a wafer W.

The second laser beam L2 may be a laser beam generated as a portion ofthe first laser beam L1 is reflected by the lower surface of the waferW. The second wafer cleaning device 11 may be damaged if the secondlaser beam L2 reaches other parts of the second wafer cleaning device11. To prevent this, the first light-absorbing plate 131 of the secondwafer cleaning device 11 according to the embodiments may absorb all ofthe second laser beam L2. For example, all of the second laser beam L2being absorbed by the first light-absorbing plate 131 as describedherein may refer to an absorbance of substantially all of the secondlaser beam L2 by the first light-absorbing plate 131. For example, theabsorbance of substantially all of the second laser beam L2 may refer toan absorbance of 99% or more of the second laser beam L2 by the firstlight-absorbing plate 131.

The hollow region 140 and a transparent window 150 may be disposedadjacent to the lower surface of the wafer W. For example, a third widthd 3 may be relatively small as compared with a first width d 1, a secondwidth d 2, a first height H1, and a second height H2. Accordingly, thesecond laser beam L2 may not leak between the transparent window 150 andthe wafer W. Therefore, all of the second laser beam L2 may enter thehollow region 140. For example, substantially all (e.g., 99% or more) ofthe second laser beam L2 may enter the hollow region 140. Then, thesecond laser beam L2 may all be absorbed by the first light-absorbingplate 131.

Since the first light-absorbing plate 131 is located on the entireportions of the side and the bottom of the hollow region 140, all of thesecond laser beam L2 may be absorbed by the first light-absorbing plate131.

The second wafer cleaning device 11 according to the embodiments canwarm or heat the lower surface of the wafer W by using the first laserbeam L1. For example, the wafer W may be heated or warmed by radiatingthe first laser beam L1 to the lower surface of the wafer W. Therefore,it may be beneficial to warm or heat the wafer W more intuitively andeasily by considering the profile of the first laser beam L1 withoutconsidering reflected waves. Therefore, a more precise etching processmay be performed.

A third wafer cleaning device 12 according to some embodiments will nowbe described with reference to FIG. 8 . Descriptions of elements andfeatures identical to those of the above-described embodiments will begiven briefly or omitted.

FIG. 8 is a cross-sectional view of a third wafer cleaning device 12according to some embodiments.

Referring to FIG. 8 , the third wafer cleaning device 12 according tothe embodiments may include a funnel-shaped hollow region 140 and asecond light-absorbing plate 132.

The second light-absorbing plate 132 may be formed along a side and abottom portions of the hollow region 140, e.g., in a funnel shape. Thesecond light-absorbing plate 132 may absorb a second laser beam L2generated by the reflection of a first laser beam L1 by a lower surfaceof a wafer W.

The hollow region 140 and a transparent window 150 may be disposedadjacent to the lower surface of the wafer W. For example, a third widthd 3 may be relatively small as compared with a first width d 1, a secondwidth d 2, a first height H1, and a second height H2. Accordingly, thesecond laser beam L2 may not leak between the transparent window 150 andthe wafer W. Therefore, all of the second laser beam L2 may enter thehollow region 140. For example, substantially all (e.g., 99% or more) ofthe second laser beam L2 may enter the hollow region 140. Then, thesecond laser beam L2 may all be absorbed by the second light-absorbingplate 132.

Since the second light-absorbing plate 132 is located at the entirebottom and side portions of the hollow region 140, all of the secondlaser beam L2 may be absorbed by the second light-absorbing plate 132.

When the hollow region 140 includes a reflective plate 130 instead ofthe second light-absorbing plate 132, the hollow region 140 may beformed in a hemispherical shape in consideration of a laser beamreflected by the reflective plate 130.

Since the third wafer cleaning device 12 according to the embodimentsuses the second light-absorbing plate 132, there is no need to widen thehollow region 140 and to form the hollow region 140 in a hemisphericalshape.

For example, the hollow region 140 may block/absorb all of the secondlaser beam L2 generated by the reflection of the first laser beam L1 bythe lower surface of the wafer W without consideration of there-reflection of a laser beam. Therefore, the hollow region 140 may beformed in a funnel shape, not in a hemispherical shape.

The second light-absorbing plate 132 at the bottom of the hollow region140 may absorb all of the second laser beam L2, therebypreventing/protecting the third wafer cleaning device 12 from beingdamaged by the second laser beam L2.

Therefore, the third wafer cleaning device 12 according to theembodiments may save space inside a housing 100. Consequently, asmaller-scale third wafer cleaning device 12 may be provided.

A fourth wafer cleaning device 13 according to some embodiments will nowbe described with reference to FIGS. 9 through 11 . Descriptions ofelements and features identical to those of the above-describedembodiments will be given briefly or omitted.

FIG. 9 is a cross-sectional view of a fourth wafer cleaning device 13according to some embodiments. FIG. 10 is a conceptual diagramillustrating the operation of first and second rotors 165 and 210 ofFIG. 9 .

Referring to FIG. 9 , the fourth wafer cleaning device 13 according tothe embodiments may include a second spinner 160 a, a grip portion 161,a chemical drain guide 163, a heat insulating block 164, the first rotor165, a sidewall portion 168, a bearing 166, and a fixing portion 167. Inaddition, the fourth wafer cleaning device 13 may include a fixed rotormodule 230. The fixing portion 167 described herein may be a fixturewhich does not move while the etching process is performed with awafer/substrate.

The grip portion 161 may be a portion that contacts sides of a wafer W.The grip portion 161 may hold the wafer W by directly hold (e.g.,contacting) the sides of the wafer W. For example, the grip portion 161may rotate in the first rotation direction a 1 or the second rotationdirection a 2 of FIG. 2 , together with the wafer W.

The grip portion 161 may include a heat insulating material. When thewafer W is warmed or heated by various elements (e.g., a laser module110) in a housing 100, the grip portion 161 may block transfer of heat,thereby preventing thermal damage to other parts of the fourth wafercleaning device 13.

The chemical drain guide 163 may guide a drain path of a liquid chemical171. The chemical drain guide 163 may be connected to the grip portion161. The liquid chemical 171 may be pushed to the sides of the wafer Wby a flow F after being used in an etching process performed on an uppersurface of the wafer W.

Then, the liquid chemical 171 may reach the chemical drain guide 163 viathe grip portion 161 on the sides of the wafer W and become a dischargeliquid chemical 171 o. The discharge liquid chemical 171 o may bedischarged to the outside along the chemical drain guide 163.

Since the chemical drain guide 163 is located at a position lower than abowl 180, the bowl 180 may prevent the liquid chemical 171 and thedischarge liquid chemical 171 o from leaking to the outside, e.g.,outside of the bowl 180. This may increase the durability of the fourthwafer cleaning device 13 and prevent the damage by the discharge liquidchemical 171 o.

The chemical drain guide 163 may be disposed at a farther/outer portionfrom the wafer W than other elements of the second spinner 160 a, e.g.,the heat insulating block 164, the first rotor 165, the sidewall portion168, the bearing 166 and the fixing portion 167. Therefore, thedischarge liquid chemical 171 o may be prevented from damaging the heatinsulating block 164, the first rotor 165, the sidewall portion 168, thebearing 166 and the fixing portion 167.

The heat insulating block 164 may form sidewalls of the second spinner160 a and may be disposed between the grip portion 161 and the chemicaldrain guide 163. The heat insulating block 164 may be made of a heatinsulating material to prevent the heat received by the grip portion 161and the chemical drain guide 163 from being transferred to otherelements of the second spinner 160 a.

Although the heat insulating block 164 is located at a position that isdirectly coupled to (e.g., contacts) the grip portion 161 and thechemical drain guide 163 in FIG. 9 , the invention is not limited tothis case. The heat insulating block 164 may be located at any positionin the second spinner 160 a.

Although the heat insulating block 164 is illustrated as a singleelement in FIG. 9 , the invention is not limited to this case. Forexample, the heat insulating block 164 may be disposed as a plurality ofelements, e.g., at a plurality of places.

The first rotor 165 may rotate the second spinner 160 a using magneticforce, e.g., magnetic levitation, as the second rotor 210 to bedescribed later uses magnetic force. Since the first rotor 165 is fixedto the heat insulating block 164, the sidewall portion 168 and the gripportion 161 of the second spinner 160 a, the whole of the second spinner160 a may be rotated by the rotation of the first rotor 165. Therefore,the wafer W may also rotate together with the second spinner 160 a.

The first rotor 165 may include a magnetic substance. The first rotor165 may generate a rotational force through a magnetic force/magnetism,together with the second rotor 210 that also includes a magneticsubstance. This will be described in more detail later.

The sidewall portion 168 may contact the first rotor 165 to form thesidewalls of the second spinner 160 a. In FIG. 9 , the sidewall portion168 is located between the first rotor 165 and the bearing 166. However,the invention is not limited to this case. The sidewall portion 168 mayinclude all portions constituting the sidewalls of the second spinner160 a. Therefore, the sidewall portion 168 may be a single element as inFIG. 9 or may include a plurality of elements.

The bearing 166 may be located between the sidewall portion 168 and thefixing portion 167. However, the position of the bearing 166 is notlimited to this position. The bearing 166 may be disposed at anyposition between the fixing portion 167 that is fixed and the firstrotor 165 that rotates. For example, the fixing portion 167 may be aportion that does not move during the cleaning/etching process performedby the fourth wafer cleaning device 13.

The bearing 166 allows the second spinner 160 a to rotate. For example,the bearing 166 may be the least element that enables the second spinner160 a to rotate even though the second spinner 160 a includes the fixedfixing portion 167. For example, the other parts of the spinner 160 a,e.g., the rotor 165 and the sidewall portion 168, may be configured tobe movable with respect to the fixing portion 167.

The bearing 166 may rotate as the first rotor 165 rotates. The bearing166 may simultaneously connect the fixing portion 167 and the sidewallportion 168, the first rotor 165, the heat insulating block 164, thegrip portion 161 and the chemical drain guide 163. Therefore, the secondspinner 160 a may rotate while being fixed in position.

The fixing portion 167 may be disposed at the bottom of the secondspinner 160 a and may fix and support the second spinner 160 a. Thefixing portion 167 may not rotate. Instead, the fixing portion 167 maybe connected to the bearing 166 so that a part of the second spinner 160a may rotate.

Accordingly, some parts of the second spinner 160 a excluding the fixingportion 167 may rotate to rotate the wafer W.

The fixed rotor module 230 may be spaced apart from the second spinner160 a. The fixed rotor module 230 may surround the second spinner 160 a,e.g., in a plan view. For example, the fixed rotor module 230 may belocated between the chemical drain guide 163 and the first rotor 165.However, the invention is not limited to this case.

The fixed rotor module 230 may include the second rotor 210 and a rotorsupport 220. Like the first rotor 165 described above, the second rotor210 may rotate the second spinner 160 a using magnetic force, e.g.,magnetic levitation. For example, a combination of the first rotor 165and the second rotor 210 may produce a magnetic force to rotate thesecond spinner 160 a. The second rotor 210 is spaced apart from the heatinsulating block 164, the sidewall portion 168 and the grip portion 161of the second spinner 160 a. In addition, the second rotor 210 isconnected to the rotor support 220.

The second rotor 210 may include a magnetic substance. The second rotor210 may generate a rotational force through a magnetic force, togetherwith the first rotor 165.

Referring to FIG. 10 , the first rotor 165 may include a first rotorfirst magnetic pole region 165 a and a first rotor second magnetic poleregion 165 b. The first rotor first magnetic pole region 165 a and thefirst rotor second magnetic pole region 165 b may have differentmagnetic poles. For example, the first rotor first magnetic pole region165 a may be a north (N) pole, and the first rotor second magnetic poleregion 165 b may be a south (S) pole. Alternatively, the first rotorfirst magnetic pole region 165 a may be the S pole, and the first rotorsecond magnetic pole region 165 b may be the N pole.

The first rotor first magnetic pole region 165 a and the first rotorsecond magnetic pole region 165 b may be alternately arranged.

Similarly, the second rotor 210 may include a second rotor firstmagnetic pole region 210 a and a second rotor second magnetic poleregion 210 b. The second rotor first magnetic pole region 210 a and thesecond rotor second magnetic pole region 210 b may have differentmagnetic poles. For example, the second rotor first magnetic region 210a may be the N pole, and the second rotor second magnetic pole region210 b may be the S pole. Alternatively, the second rotor first magneticpole region 210 a may be the S pole, and the second rotor secondmagnetic pole region 210 b may be the N pole.

The first rotor first magnetic pole region 165 a may have the samemagnetic pole as the second rotor first magnetic pole region 210 a. Thefirst rotor second magnetic pole region 165 b may have the same magneticpole as the second rotor second magnetic pole region 210 b.

The first rotor first magnetic pole region 165 a, the first rotor secondmagnetic pole region 165 b, the second rotor first magnetic pole region210 a and the second rotor second magnetic pole region 210 b may bestaggered. The first rotor first magnetic pole region 165 a, the firstrotor second magnetic pole region 165 b, the second rotor first magneticpole region 210 a and the second rotor second magnetic pole region 210 bmay be implemented through, but not limited to, electromagnets.

Since the first rotor first magnetic pole region 165 a, the first rotorsecond magnetic pole region 165 b, the second rotor first magnetic poleregion 210 a and the second rotor second magnetic pole region 210 b arestaggered, the first rotor 165 may rotate in the first rotationdirection a 1 and/or the second rotation direction a 2.

For example, the first rotor first magnetic pole region 165 a and thesecond rotor first magnetic pole region 210 a have forces repulsive toeach other, and the first rotor first magnetic pole region 165 a and thesecond rotor second magnetic pole region 210 b have forces attractive toeach other. Similarly, the first rotor second magnetic pole region 165 band the second rotor second magnetic pole region 210 b have forcesrepulsive to each other, and the first rotor second magnetic pole region165 b and the second rotor first magnetic pole region 210 a have forcesattractive to each other.

Therefore, the staggered first and second rotors 165 and 210 have arotational force that causes different regions to face each other. Forexample, the second spinner 160 a comprising the first rotor 165 mayrotate such that the first rotor first magnetic pole region 165 a andthe second rotor second magnetic pole region 210 b face each other andthat the first rotor second magnetic pole region 165 b and the secondrotor first magnetic pole region 210 a face each other. Then, when thefirst rotor 165 or the second rotor 210 reverses the alternatelyarranged magnetic pole regions, the rotation of the second spinner 160 amay be further accelerated.

In this way, the second spinner 160 a may rotate using magnetic force,e.g., magnetic levitation. Since the fourth wafer cleaning device 13according to the embodiments generates a rotational force without acontact between the first rotor 165 and the second rotor 210, it is freefrom mechanical abrasion, and its durability may be enhanced/maintained.In addition, since there is no thermal conduction between the firstrotor 165 and the second rotor 210, the fourth wafer cleaning device 13may have a long life.

The rotor support 220 may be disposed under the second rotor 210 and maysupport the second rotor 210. The rotor support 220 may be fixed to thesecond rotor 210. The rotor support 220 may have a fixed position. Forexample, the rotor support 220 may not move, e.g., with respect to otherparts of the fourth wafer cleaning device 13 like the bowl 180 and/orthe fixing portion 167, while an etching/cleaning process is performedin the fourth wafer cleaning device 13.

Therefore, the second rotor 210 may be fixed, and the first rotor 165that may be relatively rotated by the bearing 166 may rotate in thefirst rotation direction a 1 or the second rotation direction a 2.

Since the first rotor 165 and the second rotor 210 are magneticsubstances, they may be vulnerable to heat. Therefore, a coolant C maymove between the first rotor 165 and the second rotor 210 to cool thefirst rotor 165 and the second rotor 210.

Here, the coolant C may be, but is not limited to, an N₂ gas.

FIG. 11 is a block diagram of the fourth wafer cleaning device 13according to the embodiments and a cooling module 240.

Referring to FIG. 11 , the cooling module 240 may provide the coolant Cto the fourth wafer cleaning device 13. Accordingly, the fourth wafercleaning device 13 may cool the first rotor 165 and the second rotor210.

However, the invention is not limited to this case. For example, thecooling module 240 may be located within the fourth wafer cleaningdevice 13 according to certain embodiments.

Since the fourth wafer cleaning device 13 according to the embodimentsrotates the second spinner 160 a using magnetic force, e.g., magneticlevitation, the second spinner 160 a may rotate without a contactbetween the first rotor 165 and the second rotor 210.

Therefore, the durability of the fourth wafer cleaning device 13 may beimproved, leading to a longer life. In addition, the wafer W may rotateuniformly and stably due to absence of friction.

A wafer cleaning method according to some embodiments will now bedescribed with reference to FIGS. 1, 3, 12 and 13 . Descriptions ofelements and features identical to those of the above-describedembodiments will be given briefly or omitted.

FIG. 12 is a flowchart illustrating a wafer cleaning method according tosome embodiments. FIG. 13 is a detailed flowchart illustrating a heatingoperation of the wafer cleaning method according to the embodiments.

Referring to FIG. 12 , a wafer is placed on a housing (operation S100).

For example, referring to FIG. 1 , a housing 100 may be located under awafer W. For example, the housing 100 and the wafer W may be arrangedsuccessively in the third direction Z. An upper surface of the housing100 may be adjacent to a lower surface of the wafer W. However, thehousing 100 and the wafer W may not contact each other.

A first spinner 160 may contact sides of the wafer W. The first spinner160 may fix the sides of the wafer W in position and keep the housing100 and the wafer W spaced apart from each other.

Referring back to FIG. 12 , a liquid chemical is supplied onto the wafer(operation S200).

For example, referring to FIG. 1 , a nozzle 170 may be placed above thewafer W and the first spinner 160. The nozzle 170 may supply a liquidchemical 171 onto an upper surface of the wafer W. The nozzle 170 maydrop the liquid chemical 171 onto a central portion of the wafer W. Asthe wafer W rotates, the dropped liquid chemical 171 may be spread overthe entire upper surface of the wafer W.

Referring back to FIG. 12 , the wafer is rotated (operation S400).

For example, referring to FIG. 1 , the first spinner 160 may rotate thewafer W while holding the wafer W on the sides of the wafer W. As thefirst spinner 160 rotates in a first rotation direction a 1 or a secondrotation direction a 2, the wafer W may also rotate in the samedirection.

When the wafer W rotates along with the first spinner 160, the liquidchemical 171 supplied onto the upper surface of the wafer W may evenlyspread on the upper surface of the wafer W. The rotation of the wafer Walong with the first spinner 160 may help the upper surface of the waferW have a uniform etch rate.

Although the supplying of the liquid chemical onto the wafer (operationS200) and the rotating of the wafer (operation S400) are illustrated assequential operations in FIG. 12 , the invention is not limited to thiscase. For example, the supplying of the liquid chemical onto the wafer(operation S200) and the rotating of the wafer (operation S400) may beperformed simultaneously.

Referring back to FIG. 12 , the entire lower surface of the wafer isheated (operation S300). This may be performed at the same time as thesupplying of the liquid chemical onto the wafer (operation S200) and therotating of the wafer (operation S400). Here, “at the same time” doesnot mean that different operations are performed at exactly the sametime but may include a case where execution times of differentoperations partially overlap. For example, “at the same time” may referto a case where the execution times of different operations performedindependently overlap.

For example, referring to FIG. 1 , a laser module 110 may be disposedinside the housing 100. The lase module 110 may radiate a laser beamfrom under the wafer W to the lower surface of the wafer W. The lasermodule 110 may be located under a hollow region 140 or at a bottom ofthe hollow region 140. A first laser beam L1 radiated by the lasermodule 110 may pass through the hollow region 140 and a transparentwindow 150 to reach the lower surface of the wafer W. Therefore, theentire lower surface of the wafer W may be heated. For example, thewafer W may be heated by radiating the first laser beam L1 to the lowersurface of the wafer W.

Referring to FIG. 13 , a first laser beam is supplied through an opticalfiber (operation S310).

For example, referring to FIG. 1 , a laser beam of the laser module 110may be supplied through an optical fiber 111. The optical fiber 111 maybe connected to the outside so as to form a path through which a laserbeam is supplied.

Referring back to FIG. 13 , the first laser beam is processed using anaspherical lens (operation S320).

For example, referring to FIGS. 1 and 3 , the first laser beam L1supplied by the optical fiber 111 may have a Gaussian profile Lg. TheGaussian profile Lg of the first laser beam L1 may be converted into afirst output profile Lo 1 as the first laser beam L1 passes through anaspherical lens 120. Referring to the first output profile Lo 1, auniform energy E may be supplied to/throughout the entire lower surfaceof the wafer W, which corresponds to a second width d 2, regardless of adistance d, e.g., as shown in FIG. 3 .

In certain embodiments, the wafer cleaning device may process the firstlaser beam L1 to a profile different from the first output profile Lo 1,if necessary.

Referring back to FIG. 13 , the lower surface of the wafer is heatedwith the first laser beam (operation S330).

For example, referring to FIG. 1 , the first laser beam L1 may passthrough the hollow region 140 and the transparent window 150 to reachthe lower surface of the wafer W. The first laser beam L1 may heat theentire lower surface of the wafer W.

A wafer cleaning method according to some embodiments will now bedescribed with reference to FIGS. 1, 12 and 14 . Descriptions ofelements and features identical to those of the above-describedembodiments will be given briefly or omitted.

The current embodiments may be the same as the above-describedembodiments in the operations illustrated in FIG. 12 . Therefore, amongthe operations illustrated in FIG. 12 , only the operation of heatingthe entire lower surface of the wafer (operation S300) will be describedin detail again.

FIG. 14 is a detailed flowchart illustrating a heating operation of awafer cleaning method according to some embodiments. Supplying a firstlaser beam through an optical fiber (operation S310), processing thefirst laser beam using an aspherical lens (operation S320) and heating alower surface of a wafer with the first laser beam (operation S330) arethe same as those of FIG. 13 . Therefore, only the operation of heatingthe lower surface of the wafer with a third laser beam which isdifferent from FIG. 13 will be described.

Referring to FIG. 14 , the lower surface of the wafer is heated with thethird laser beam (operation S340).

For example, referring to FIG. 1 , the hollow region 140 may behemispherical. The hollow region 140 may be formed in a hemisphericalshape because a second laser beam L2 generated by the reflection of thefirst laser beam L1 by the lower surface of the wafer W should bereflected by a reflective plate 130. Therefore, a third laser beam L3generated by the reflection of the second laser beam L2 by thereflective plate 130 may efficiently reach the lower surface of thewafer W.

While the present inventive concept has been particularly shown anddescribed with reference to exemplary embodiments thereof, it will beunderstood by those of ordinary skill in the art that various changes inform and details may be made therein without departing from the spiritand scope of the present inventive concept as defined by the followingclaims. It is therefore desired that the present embodiments beconsidered in all respects as illustrative and not restrictive,reference being made to the appended claims rather than the foregoingdescription to indicate the scope of the invention.

What is claimed is:
 1. A method comprising: providing a housing,including a hollow formed in the housing; providing a laser moduleconfigured to radiate a laser beam, the laser module disposed in thehollow; providing a grip configured to hold a wafer; providing atransparent window disposed at a top of the hollow to seal the hollow,the transparent window positioned to transmit the laser beam, whereinthe transparent window is positioned adjacent to a lower surface of thewafer; and heating the wafer using the laser module by irradiating theentire lower surface of the wafer using the laser beam, wherein a bottomsurface of the wafer is not connected to an upper surface of thetransparent window while the laser beam heats the wafer.
 2. The methodof claim 1, wherein the laser module comprises: an optical fiberconfigured to supply the laser beam; and an aspherical lens configuredto change a profile of the laser beam emitted from the optical fiber. 3.The method of claim 2, further comprising a reflective plate disposedalong a bottom of the hollow.
 4. The method of claim 3, wherein theaspherical lens is designed in consideration of a curvature of thereflective plate so that the laser beam is uniformly radiated to thelower surface of the wafer.
 5. The method of claim 1, further comprisinga spinner configured to contact sides of the wafer, the spinnerconfigured to rotate the wafer.
 6. The method of claim 5, furthercomprising a first rotor and a second rotor, wherein the spinnercomprises the first rotor which comprises a magnetic substance, whereinthe second rotor comprises a magnetic substance, wherein the secondrotor is spaced apart from the spinner, and wherein the second rotor isconfigured to rotate the first rotor.
 7. The method of claim 5, whereinthe spinner is configured to rotate together with the wafer.
 8. Themethod of claim 1, wherein the hollow is hemispherical.
 9. A method ofmanufacturing a semiconductor device, the method comprising: placing awafer above a housing by holding the wafer with a spinner on sides ofthe wafer; supplying a liquid chemical onto the wafer; rotating thewafer using the spinner to evenly spread the liquid chemical on an uppersurface of the wafer; and heating the wafer with a first laser beamradiated from a laser module disposed in the housing.
 10. The method ofclaim 9, wherein the supplying of the liquid chemical onto the wafer,the rotating of the wafer, and the heating of the wafer are performedsimultaneously.
 11. The method of claim 9, wherein the heating of thewafer comprises irradiating the entire lower surface of the wafer withthe first laser beam and a third laser beam generated by reflection of asecond laser beam, wherein the second laser beam is a laser beamgenerated by reflection of the first laser beam by the lower surface ofthe wafer, and wherein the third laser beam is a laser beam generated byreflection of the second laser beam by a reflective plate disposed alonga bottom of a hollow formed in the housing.
 12. The method of claim 9,wherein the heating of the wafer comprises: supplying the first laserbeam through an optical fiber; and processing the first laser beam usingan aspherical lens and letting the processed first laser beam reach thelower surface of the wafer.
 13. The method of claim 9, wherein theliquid chemical etches SiN or polysilicon formed on the upper surface ofthe wafer.